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Electrical and structural properties of antimony-doped p-type ZnO nanorods with self-corrugated surfaces

Friday, November 16, 2012 10:23
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Jang-Won Kang, Yong-Seok Choi, Minhyeok Choe, Na-Yeong Kim, Takhee Lee, Bong-Joong Kim, C W Tu and Seong-Ju Park

We report on p-type conductivity in antimony (Sb)-doped ZnO (ZnO:Sb) nanorods which have self-corrugated surfaces. The p-ZnO:Sb/n-ZnO nanorod diode shows good rectification characteristics, confirming that a p–n homojunction is formed in the ZnO nanorod diode. The low-temperature photoluminescence (PL) spectra of the ZnO:Sb nanorods reveal that the p-type conductivity in p-ZnO:Sb is related to the Sb Zn –2V Zn complex acceptors. Transmission electron microscopy (TEM) analysis of the ZnO:Sb nanorods also shows that the p-type conductivity is attributed to the Sb Zn –2V Zn complex acceptors which can be easily formed near the self-corrugated surface regions of ZnO:Sb nanorods. These results suggest that the Sb Zn –2V Zn complex acceptors are mainly responsible for the p-type conductivity in ZnO:Sb nanorods which have corrugated surfaces.

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