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Spingate developed a 2-bit per MTJ structure, to develop 1 Tbits/in2 MRAM
Spingate announced that they invented a multi-bit Spin-RAM, which can store two bits per MTJ. It uses magnetic materials with perpendicular anisotropy and has a cell size of 4F2, which is the smallest currently reported in the industry. This kind of memory can provide a density of about 160 Gbits/in2 (0.257 Gbit/mm2) at 45 nm. Scaling it to 10 nm will enable 1 Tbits/in2.
Spingat’e Spin-RAM uses the company’s proprietary hybrid write mechanism based on a simultaneous application of a spin-polarized current and a bias magnetic field. The hybrid write mechanism provides the Spin RAM with a high switching speed (about 1 ns or less), low density of the spin-polarized current (about 1?106 A/cm2 or less), excellent endurance (about 1015 or above) and error rate. Spingate says that it can be smoothly arranged in a 3D architecture (without additional layers or selection transistors).
2012-11-21 03:41:09
Source: http://www.mram-info.com/spingate-developed-2-bit-mtj-structure-develop-1-tbitsin2-mram
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