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High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Friday, December 21, 2012 9:33
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J. M. Ulloa, J. M. Llorens, and B. Alén et al.
The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction … [Appl. Phys. Lett. 101, 253112 (2012)] published Fri Dec 21, 2012.
2012-12-21 09:17:46
Source: http://nanochemistry.blogspot.com/2012/12/high-efficient-luminescence-in-type-ii.html
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