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Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance
Saturday, December 8, 2012 11:52
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Where size matters
Seongil Im
Nanoscale , 2012, Accepted Manuscript
DOI: 10.1039/C2NR33443G, Communication
Sung-Wook Min, Hee Sung Lee, Hyoung Joon Choi, Min Kyu Park, Sunmin Ryu, Seongil Im
We report on the nanosheet-thickness effects on the performance of top-gate MoS2 field-effect transistors (FETs), which is directly related to the MoS2 dielectric constant. Our top-gate nanosheet FETs with 40…
The content of this RSS Feed (c) The Royal Society of Chemistry
2012-12-08 11:42:06
Source: http://nanochemistry.blogspot.com/2012/12/nanosheet-thickness-modulated-mos2.html
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