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Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices
Tuesday, December 11, 2012 15:04
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Where size matters
(author unknown)
Sejoon Lee, Emil B. Song, and Sung Min Kim et al.
A graphene charge-trap memory is devised using a single-layer graphene channel with an Al2O3/AlOx/Al2O3 oxide stack, where the ion-bombarded AlOx layer is intentionally added to create an abundance of charge-trap sites. The low dielectric constant of AlOx compared to Al2O3 reduces the potential dr … [Appl. Phys. Lett. 101, 243109 (2012)] published Tue Dec 11, 2012.
2012-12-11 13:48:57
Source: http://nanochemistry.blogspot.com/2012/12/reduced-electron-back-injection-in.html
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