Tuning resistive switching on single-pulse doped multilayer memristors

Short-period multilayers containing ultrathin atomic layers of Al embedded in titanium dioxide (TiO 2 ) film—here called single-pulse doped multilayers—are fabricated by atomic layer deposition (ALD) growth methods. The approach explored here is to use Al atoms through single-pulsed deposition to locally modify the chemical environment of TiO 2 films, establishing a chemical control over the resistive switching properties of metal/oxide/metal devices. We show that this simple methodology can be employed to produce well-defined and controlled electrical characteristics on oxide thin films without compound segregation. The increase in volume of the embedded Al 2 O 3 plays a crucial role in tuning the conductance of devices, as well as the switching bias. The stacking of these oxide compounds and their use in electrical devices is investigated with respect to possible crystalline phases and local compound formation via chemical recombination. I…

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2012-12-21 10:34:17

Source: http://nanochemistry.blogspot.com/2012/12/tuning-resistive-switching-on-single.html