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UCLA’s new MeRAM technology is 10 to 1000 times more energy efficient than STT-RAM, give times as dense
UCLA researcher have managed to make major improves in MRAM memory by electric voltage instead of a flowing electric current (which is used in STT-MRAM). They call the new memory MeRAM (Magnetoelectric Random Access Memory). The researchers say that MeRAM combines extraordinary low energy with very high density, high-speed reading and writing times, and non-volatility.
By using voltage to write data into MeRAM’s memory, there’s no need to move large numbers of electrons through wires and so the writing generates much less heat – in fact MeRAM could be 10 to 1,000 times more energy-efficient than STT-MRAM. It’s also five times as dense (more bits stored in the same physical area). This should hopefully make MeRAM cheaper, too.
2012-12-16 11:46:25
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