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Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer
Monday, December 3, 2012 17:22
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M. Aouassa, S. Escoubas, and A. Ronda et al.
Porous silicon (PSi) layers are used as templates to grow epitaxial planar and fully relaxed Ge pseudo-substrates. An annealing at 600 °C, dramatically changes the PSi morphology and produces compliant template layers which serve in a second step, as substrate for the epitaxy of fully relaxed SiGe … [Appl. Phys. Lett. 101, 233105 (2012)] published Mon Dec 03, 2012.
2012-12-03 17:03:21
Source: http://nanochemistry.blogspot.com/2012/12/ultra-thin-planar-fully-relaxed-ge.html
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