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Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots
Wednesday, January 16, 2013 9:22
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Meng Sun, Paul J. Simmonds, and Ramesh Babu Laghumavarapu et al.
The structural and optical properties of InAs self-assembled quantum dots buried in AlAs0.56Sb0.44 barriers can be controlled using GaAs1−xSbx cladding layers. These cladding layers allow us to manage the amount of Sb immediately underneath and above the InAs quantum dots. The optimal cladding sch … [Appl. Phys. Lett. 102, 023107 (2013)] published Wed Jan 16, 2013.
2013-01-16 09:18:38
Source: http://nanochemistry.blogspot.com/2013/01/effects-of-gaassb-cladding-layers-on.html
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