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Gate voltage induced topological phase transition in hexagonal boron-nitride bilayers
Tuesday, January 15, 2013 12:02
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Where size matters
(author unknown)
Xuechao Zhai and Guojun Jin
Single or few-layer hexagonal boron nitride sheets usually have very large band gaps, which greatly hinders their applications in electronic circuits. In this letter, we propose a way to significantly reduce the band gap of hexagonal boron-nitride bilayer (BNBL) by applying an interlayer bias volt … [Appl. Phys. Lett. 102, 023104 (2013)] published Tue Jan 15, 2013.
2013-01-15 11:18:02
Source: http://nanochemistry.blogspot.com/2013/01/gate-voltage-induced-topological-phase.html
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