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Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy
Wednesday, March 6, 2013 11:32
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M. K. Hudait, Y. Zhu, and D. Maurya et al.
The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the Hf … [Appl. Phys. Lett. 102, 093109 (2013)] published Wed Mar 06, 2013.
2013-03-06 11:20:05
Source: http://nanochemistry.blogspot.com/2013/03/energy-band-alignment-of-atomic-layer.html
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