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Long Single ZnO Nanowire for Logic and Memory Circuits: NOT, NAND, NOR Gate, and SRAM

Thursday, March 28, 2013 9:11
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Where size matters

Seongil Im

, 2013, Accepted Manuscript

DOI: 10.1039/C3NR01015E, Communication

Young Tack Lee, Syed Raza Ali Raza, Pyo Jin Jeon, Ryong Ha, Heon-Jin Choi, Seongil Im

We demonstrate logic and static random access memory (SRAM) circuits using a 100 [small mu ]m-long and 100 nm-thin single ZnO nanowire (NW), which plays as a channel of field-effect transistors (FETs)…

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