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Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters
Friday, March 15, 2013 9:26
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Prof. Dr. Yichun Liu
, 2013, Accepted Manuscript
DOI: 10.1039/C3NR33692A, Paper
Zhongqiang Wang, Haiyang Xu, Lei Zhang, Xinghua Li, Jiangang Ma, Xintong Zhang, Prof. Dr. Yichun Liu
By introducing Ag nanoclusters (NCs), ZnO-based resistive switching memory devices offer improved performance, including improved uniformity of switching parameters, and increased switching speed with excellent reliability. These Ag NCs are…
The content of this RSS Feed (c) The Royal Society of Chemistry
2013-03-15 09:19:14
Source: http://nanochemistry.blogspot.com/2013/03/performance-improvement-of-resistive.html
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