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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy
Friday, May 3, 2013 11:41
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N. Cherkashin, S. Reboh, and M. J. Hÿtch et al.
Non-truncated pyramidal In(Ga)As quantum dots (QDs) embedded in GaAs were obtained by a combination of low temperature/high rate GaAs covering of InAs QDs. We use advanced transmission electron microscopy to study the composition and mechanics of the objects. Results from the core region of a slic … [Appl. Phys. Lett. 102, 173115 (2013)] published Fri May 03, 2013.
2013-05-03 08:47:30
Source: http://nanochemistry.blogspot.com/2013/05/determination-of-stress-strain-and.html
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