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Morphology and composition controlled GaxIn1-xSb nanowires: understanding ternary antimonide growth
Monday, December 2, 2013 8:01
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Nanoscale , 2014, Advance Article
DOI: 10.1039/C3NR05079C, Paper
Sepideh Gorji Ghalamestani, Martin Ek, Masoomeh Ghasemi, Philippe Caroff, Jonas Johansson, Kimberly A. Dick
A comprehensive study on understanding the growth behaviour of epitaxially grown Gax In1-x Sb nanowires including full compositional control and supported with theoretical modelling.
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