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Breakdown of metallic single-wall carbon nanotube paths by NiO nanoparticle point etching for high performance thin film transistors
Wednesday, December 10, 2014 2:50
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Where size matters
Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR06057A, Communication
Shisheng Li, Shunsuke Sakurai, Don N. Futaba, Kenji Hata
An NiO nanoparticle point etching method has been utilised to etch metallic SWCNT pathways selectively and highly locally, achieving a huge increase in the on/off ratios of FET devices while minimizing the unavoidable drop in on-state current.
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Source: http://nanochemistry.blogspot.com/2014/12/breakdown-of-metallic-single-wall.html
