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InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due to the strong near-fields confined at the interface of Al/GaN and extended to the multiple quantum wells (MQWs) active region. The dynamics of carrier recombination and plasmon-enhanced Raman scattering were also investigated, providing a progressive view on the effective energy transfer between MQWs and surface plasmons.

Guogang Zhang, Zhe Zhuang, Xu Guo, Fang-Fang Ren, Bin Liu, Haixiong Ge, Zili Xie, Ling Sun, Ting Zhi, Tao Tao, Yi Li, Youdou Zheng and Rong Zhang

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