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Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays
Wednesday, March 4, 2015 9:56
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Nanoscale , 2015, 7,4964-4970
DOI: 10.1039/C4NR06922F, Paper
Ming Wang, Jiantao Zhou, Yuchao Yang, Siddharth Gaba, Ming Liu, Wei D. Lu
The conduction mechanism of a Pd/TaOx /Ta/Pd selector device, which exhibits high non-linearity ([similar]104 ) and excellent uniformity, has been systematically investigated by current-voltage-temperature characterization.
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Source: http://nanochemistry.blogspot.com/2015/03/conduction-mechanism-of-taox-based.html
