Story Views
Now:
Last Hour:
Last 24 Hours:
Total:

% of readers think this story is Fact. Add your two cents.

The conductivity and charge carrier concentration of single GaN nanowires (NWs) doped with different concentrations of Ge were determined by four-point resistivity and temperature-dependent Seebeck coefficient measurements. We observed high carrier concentrations ranging from 9.1???10 18 to 5.5???10 19 cm ?3 , well above the Mott density of 1.6???10 18 cm ?3 , and conductivities up to 625 S cm ?1 almost independent of the NW diameter. The weak temperature dependence of the conductivity between 2 and 10 K could be assigned to the formation of an impurity band. For the sample with the highest conductivity metallic behaviour was found, indicated by a positive temperature coefficient of the resistivity. The near band edge emission analyzed by micro-photoluminescence spectroscopy showed only a small increase of the peak width up to 70 meV and no spectral shift for carrier concentrations up to 5.5???10 19 cm ?3

M Sch?fer, M G?nther, C L?nger, J M??ener, M Feneberg, P Uredat, M T Elm, P Hille, J Sch?rmann, J Teubert, T Henning, P J Klar and M Eickhoff

Click for full article