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Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application
Friday, March 13, 2015 2:35
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Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR06406B, Paper
Shuang Gao, Fei Zeng, Fan Li, Minjuan Wang, Haijun Mao, Guangyue Wang, Cheng Song, Feng Pan
The simple Pt/TaOx /n-Si structure exhibits a forming-free and self-rectifying resistive switching behavior and consequently possesses great potential for access device-free high-density memory applications.
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Source: http://nanochemistry.blogspot.com/2015/03/forming-free-and-self-rectifying_13.html
