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Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application
Wednesday, March 4, 2015 2:43
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Nanoscale , 2015, Accepted Manuscript
DOI: 10.1039/C4NR06406B, Paper
Shuang Gao, Fei Zeng, Fan Li, Minjuan Wang, Haijun Mao, Guangyue Wang, Cheng Song, feng pan
The search for self-rectifying resistive memories has aroused great attention due to their potential high-density memory application without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive…
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Source: http://nanochemistry.blogspot.com/2015/03/forming-free-and-self-rectifying.html
