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Manganite-based memristive heterojunction with tunable non-linear I-V characteristics
Friday, March 20, 2015 10:17
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Nanoscale , 2015, Advance Article
DOI: 10.1039/C5NR00861A, Communication
Hong-Sub Lee, Hyung-Ho Park, M. J. Rozenberg
A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure.
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Source: http://nanochemistry.blogspot.com/2015/03/manganite-based-memristive.html
