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Selective GaSb radial growth on crystal phase engineered InAs nanowires

Tuesday, May 26, 2015 3:50
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Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR01165E, Paper
Luna Namazi, Malin Nilsson, Sebastian Lehmann, Claes Thelander, Kimberly A. Dick
In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy.
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Source: http://nanochemistry.blogspot.com/2015/05/selective-gasb-radial-growth-on-crystal_26.html

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