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Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

Friday, June 5, 2015 9:02
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Nanoscale, 2015, Advance Article
DOI: 10.1039/C4NR06417H, Paper
Xing Long Shao, Li Wei Zhou, Kyung Jean Yoon, Hao Jiang, Jin Shi Zhao, Kai Liang Zhang, Sijung Yoo, Cheol Seong Hwang
Electronic bipolar resistance switching (eBRS) in an Al/TiOx/Al structure, where the TiOx layer was reactively sputter-deposited, was examined in conjunction with a structural analysis using transmission electron microscopy.
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Source: http://nanochemistry.blogspot.com/2015/06/electronic-resistance-switching-in.html

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