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Few-layered titanium trisulfide (TiS3) field-effect transistors
Wednesday, July 1, 2015 2:50
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Where size matters
Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR01895A, Communication
DOI: 10.1039/C5NR01895A, Communication
Alexey Lipatov, Peter M. Wilson, Mikhail Shekhirev, Jacob D. Teeter, Ross Netusil, Alexander Sinitskii
Titanium trisulfide (TiS3) whiskers can be mechanically exfoliated and used for fabrication of field-effect transistors, which upon coating with Al2O3 exhibit mobilities up to 43 cm2 V-1 s-1 and ON/OFF ratios up to 7000.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Titanium trisulfide (TiS3) whiskers can be mechanically exfoliated and used for fabrication of field-effect transistors, which upon coating with Al2O3 exhibit mobilities up to 43 cm2 V-1 s-1 and ON/OFF ratios up to 7000.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/07/few-layered-titanium-trisulfide-tis3.html
