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Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes
Monday, September 21, 2015 3:06
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Where size matters
Nanoscale, 2015, 7,15099-15105
DOI: 10.1039/C5NR04239A, Communication
DOI: 10.1039/C5NR04239A, Communication
Ah Hyun Park, Tae Hoon Seo, S. Chandramohan, Gun Hee Lee, Kyung Hyun Min, Seula Lee, Myung Jong Kim, Yong Gyoo Hwang, Eun-Kyung Suh
A facile method for the epitaxial lateral overgrowth of high-quality gallium nitride was developed by using single-walled carbon nanotubes.
The content of this RSS Feed (c) The Royal Society of Chemistry
A facile method for the epitaxial lateral overgrowth of high-quality gallium nitride was developed by using single-walled carbon nanotubes.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/09/efficient-stress-relaxation-in-ingangan_21.html
