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Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics
Friday, October 9, 2015 8:01
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Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR05036G, Paper
DOI: 10.1039/C5NR05036G, Paper
Guanhong Li, Qunqing Li, Yuanhao Jin, Yudan Zhao, Xiaoyang Xiao, Kaili Jiang, Jiaping Wang, Shoushan Fan
A bilayer dielectric structure of MgO and ALD Al2O3 or HfO2 was used for making n-type SWCNT-TFTs at a low temperature of 120 [degree]C.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
A bilayer dielectric structure of MgO and ALD Al2O3 or HfO2 was used for making n-type SWCNT-TFTs at a low temperature of 120 [degree]C.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/10/fabrication-of-air-stable-n-type-carbon.html
