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Interface Schottky barrier engineering via strain in metal-semiconductor composites
Thursday, October 29, 2015 3:40
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Where size matters
Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR05583K, Paper
DOI: 10.1039/C5NR05583K, Paper
Xiangchao Ma, Ying Dai, Lin Yu, Baibiao Huang
We show that strain can be an effective way to tune the interface Schottky barrier height in metal-semiconductor composites.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
We show that strain can be an effective way to tune the interface Schottky barrier height in metal-semiconductor composites.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/10/interface-schottky-barrier-engineering_29.html
