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Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR03608A, Paper

S. Heedt, Isabel Otto, Kamil Sladek, Hilde Hardtdegen, Jurgen Schubert, Natalia Demarina, Hans Luth, Detlev Gruetzmacher, Thomas Schapers
We have modeled InAs nanowires using finite element methods considering the actual device geometry, the semiconducting nature of the channel and surface states, providing a comprehensive picture of charge distribution…
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