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Transport properties of unrestricted carriers in bridge-channel MoS2 field-effect transistors
Thursday, October 8, 2015 1:50
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Where size matters
Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR04397B, Paper
DOI: 10.1039/C5NR04397B, Paper
Dongri Qiu, Dong Uk Lee, Chang Soo Park, Kyoung Su Lee, Eun Kyu Kim
The non-encapsulated MoS2 transistors with a four-layered bridge-channel reveal a mobility of about 65.8 cm2 V-1 s-1 and a significant improvement of subthreshold slope (112.9 mV per decade), resulting in two orders of magnitude lower localized states (3.84 [times] 1010 states V-1 cm-2) than the unsuspended devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
The non-encapsulated MoS2 transistors with a four-layered bridge-channel reveal a mobility of about 65.8 cm2 V-1 s-1 and a significant improvement of subthreshold slope (112.9 mV per decade), resulting in two orders of magnitude lower localized states (3.84 [times] 1010 states V-1 cm-2) than the unsuspended devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/10/transport-properties-of-unrestricted.html
