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Tuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3 thin film
Wednesday, December 23, 2015 4:37
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Nanoscale, 2016, 8,741-751
DOI: 10.1039/C5NR06086A, Communication
DOI: 10.1039/C5NR06086A, Communication
Tae-Hyeon Kim, KwangSik Jeong, Byung Cheol Park, Hyejin Choi, Sang Han Park, Seonghoon Jung, Jaehun Park, Kwang-Ho Jeong, Jeong Won Kim, Jae Hoon Kim, Mann-Ho Cho
Strain-dependent Bi2Se3 films of various thickness are grown via a self-organized ordering process. As the film thickness decreases from 8 to 2 QL, significant changes of the Fermi level and bandgap were observed. Our results provides an understanding of critical effect on the change in band structure caused by the structural deformation in a topological insulator.
The content of this RSS Feed (c) The Royal Society of Chemistry
Strain-dependent Bi2Se3 films of various thickness are grown via a self-organized ordering process. As the film thickness decreases from 8 to 2 QL, significant changes of the Fermi level and bandgap were observed. Our results provides an understanding of critical effect on the change in band structure caused by the structural deformation in a topological insulator.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/12/tuning-fermi-level-with-topological_23.html
