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Tuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3 thin film
Friday, December 11, 2015 3:27
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Where size matters
Nanoscale, 2016, Advance Article
DOI: 10.1039/C5NR06086A, Communication
DOI: 10.1039/C5NR06086A, Communication
Tae-Hyeon Kim, KwangSik Jeong, Byung Cheol Park, Hyejin Choi, Sang Han Park, Seonghoon Jung, Jaehun Park, Kwang-Ho Jeong, Jeong Won Kim, Jae Hoon Kim, Mann-Ho Cho
Strain-dependent Bi2Se3 films of various thickness are grown via a self-organized ordering process. As the film thickness decreases from 8 to 2 QL, significant changes of the Fermi level and bandgap were observed. Our results provides an understanding of critical effect on the change in band structure caused by the structural deformation in a topological insulator.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Strain-dependent Bi2Se3 films of various thickness are grown via a self-organized ordering process. As the film thickness decreases from 8 to 2 QL, significant changes of the Fermi level and bandgap were observed. Our results provides an understanding of critical effect on the change in band structure caused by the structural deformation in a topological insulator.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/12/tuning-fermi-level-with-topological.html
