Online:
Visits:
Stories:
Profile image
By OLED-Info (Reporter)
Contributor profile | More stories
Story Views

Now:
Last Hour:
Last 24 Hours:
Total:

A graphene interlayer enhanced the performance of Schottky diodes

Thursday, February 9, 2017 4:06
% of readers think this story is Fact. Add your two cents.

(Before It's News)

A team of researchers affiliated with UNIST has designed a technique that greatly enhances the performance of Schottky Diodes (metal-semiconductor junction) used in electronic devices. The research findings are especially interesting as they address the contact resistance problem of metal-semiconductors.

The researchers have created a new type of diode with a graphene insertion layer sandwiched between metal and semiconductor. They demonstrated that this graphene layer not only suppresses the material intermixing substantially, but also matches well with the theoretical prediction that “In the case of silicon semiconductors, the electrical properties of the junction surfaces hardly change regardless of the type of metal they use”.



Source: http://www.graphene-info.com/graphene-interlayer-enhanced-performance-schottky-diodes

Report abuse

Comments

Your Comments
Question   Razz  Sad   Evil  Exclaim  Smile  Redface  Biggrin  Surprised  Eek   Confused   Cool  LOL   Mad   Twisted  Rolleyes   Wink  Idea  Arrow  Neutral  Cry   Mr. Green

Top Stories
Recent Stories

Register

Newsletter

Email this story
Email this story

If you really want to ban this commenter, please write down the reason:

If you really want to disable all recommended stories, click on OK button. After that, you will be redirect to your options page.