A graphene interlayer enhanced the performance of Schottky diodes

A team of researchers affiliated with UNIST has designed a technique that greatly enhances the performance of Schottky Diodes (metal-semiconductor junction) used in electronic devices. The research findings are especially interesting as they address the contact resistance problem of metal-semiconductors.

The researchers have created a new type of diode with a graphene insertion layer sandwiched between metal and semiconductor. They demonstrated that this graphene layer not only suppresses the material intermixing substantially, but also matches well with the theoretical prediction that “In the case of silicon semiconductors, the electrical properties of the junction surfaces hardly change regardless of the type of metal they use”.