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Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks
Monday, December 3, 2012 17:22
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Where size matters
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Da-Wei Lin, Chia-Yu Lee, and Che-Yu Liu et al.
This study presents the green InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) grown on a GaN nanorods template with SiO2 nanomasks by metal–organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth, microscale air voids were formed between nanorods and the threadin … [Appl. Phys. Lett. 101, 233104 (2012)] published Mon Dec 03, 2012.
2012-12-03 17:03:22
Source: http://nanochemistry.blogspot.com/2012/12/efficiency-and-droop-improvement-in.html
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