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Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance
Saturday, December 15, 2012 14:43
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Where size matters
Seongil Im
Nanoscale , 2013, Advance Article
DOI: 10.1039/C2NR33443G, Communication
Sung-Wook Min, Hee Sung Lee, Hyoung Joon Choi, Min Kyu Park, Taewook Nam, Hyungjun Kim, Sunmin Ryu, Seongil Im
Our top-gate single-layered MoS2 field-effect transistors (FETs) demonstrated excellent device performances of ~170 cm2 V-1 s-1 and 90 mV dec-1 , benefiting from the dielectric screening by high-k dielectric Al2 O3 . But the benefit vanishes with double- and triple-layered MoS2 .
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2012-12-15 14:30:10
Source: http://nanochemistry.blogspot.com/2012/12/nanosheet-thickness-modulated-mos2_15.html
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