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Piezoresistance behaviors of ultra-strained SiC nanowires
Wednesday, December 5, 2012 23:12
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Where size matters
(author unknown)
Ruiwen Shao, Kun Zheng, and Yuefei Zhang et al.
In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10% was achieved for a diamond-structure SiC NW with a 〈111〉 direction. With an increase in the tensile st … [Appl. Phys. Lett. 101, 233109 (2012)] published Wed Dec 05, 2012.
2012-12-05 21:41:58
Source: http://nanochemistry.blogspot.com/2012/12/piezoresistance-behaviors-of-ultra.html
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