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Reverse mass transport during capping of In0.5Ga0.5As/GaAs quantum dots
Tuesday, December 4, 2012 21:50
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H. Eisele, Ph. Ebert, and N. Liu et al.
The rates of indium mass transport between the wetting layer, the quantum dots, and the capping layer are derived from the indium distributions probed by cross-sectional scanning tunneling microscopy of the In0.5Ga0.5As/GaAs quantum dot system. During capping, a lateral back-segregation from the q … [Appl. Phys. Lett. 101, 233107 (2012)] published Tue Dec 04, 2012.
2012-12-04 19:21:47
Source: http://nanochemistry.blogspot.com/2012/12/reverse-mass-transport-during-capping.html
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