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Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions
Wednesday, January 9, 2013 12:52
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Yanbin An, Ashkan Behnam, and Eric Pop et al.
Metal-semiconductor-metal (MSM) photodetectors based on graphene/p-type Si Schottky junctions are fabricated and characterized. Thermionic emission dominates the transport across the junctions above 260 K with a zero-bias barrier height of 0.48 eV. The reverse-bias dependence of the barrier height … [Appl. Phys. Lett. 102, 013110 (2013)] published Wed Jan 09, 2013.
2013-01-09 12:05:39
Source: http://nanochemistry.blogspot.com/2013/01/metal-semiconductor-metal.html
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