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Epitaxial growth of radial Si p-i-n junctions for photovoltaic applications
Wednesday, March 6, 2013 11:32
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Jinkyoung Yoo, Shadi A. Dayeh, and Wei Tang et al.
Achieving high quality radial junctions in nanowire arrays with controlled doping profiles is critical for their potential photovoltaic applications. We present a low temperature epitaxial growth process for silicon radial p-n and p-i-n junction arrays on top-down fabricated nanowires using silane … [Appl. Phys. Lett. 102, 093113 (2013)] published Wed Mar 06, 2013.
2013-03-06 11:20:06
Source: http://nanochemistry.blogspot.com/2013/03/epitaxial-growth-of-radial-si-p-i-n.html
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