Non-ohmic behavior of carrier transport in highly disordered graphene

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source–drain voltage, V sd , we are able to study the current–voltage relation I – V sd of our device. With increasing V sd , a crossover from the linear I – V sd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small V sd occurs in the presence of high electric field and perpendicular magnetic field.

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2013-03-28 06:05:00

Source: http://nanochemistry.blogspot.com/2013/03/non-ohmic-behavior-of-carrier-transport.html