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Diffusion induced effects on geometry of Ge nanowires
Monday, June 2, 2014 2:21
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Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR01084A, Paper
S. J. Rezvani, N. Pinto, L. Boarino, F. Celegato, L. Favre, I. Berbezier
We report the geometry modifications of VLS grown Ge nanowires resulting from a change in adatoms’ diffusion length and direction, caused by the deposition flux.
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Source: http://nanochemistry.blogspot.com/2014/06/diffusion-induced-effects-on-geometry.html
