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Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

Wednesday, December 10, 2014 8:25
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The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH 3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH 3 . The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate.

Huan-Yu Shih, Ming-Chih Lin, Liang-Yih Chen and Miin-Jang Chen

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Source: http://nanochemistry.blogspot.com/2014/12/uniform-gan-thin-films-grown-on-100.html

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