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Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5 thin film with Te-layer
Monday, March 9, 2015 2:48
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Nanoscale , 2015, Accepted Manuscript
DOI: 10.1039/C5NR01361E, Paper
Sijung Yoo, Taeyong Eom, Taehong Gwon, Cheol Seong Hwang
The mechanism of bipolar resistive switching (BRS) of amorphous Ge2Sb2Te5 (GST) thin film sandwiched between inert electrodes (Ti and Pt) was examined. Typical bipolar resistive switching behavior with a high…
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Source: http://nanochemistry.blogspot.com/2015/03/bipolar-resistive-switching-behavior-of.html
