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Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions
Monday, March 9, 2015 2:48
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Nanoscale , 2015, Accepted Manuscript
DOI: 10.1039/C5NR00522A, Paper
Kun Zhang, Yan-ling Cao, Yue-wen Fang, Qiang Li, Jie Zhang, Chun-gang Duan, Shishen Yan, Yufeng Tian, Rong Huang, Rongkun Zheng, Shi-shou Kang, Yanxue Chen, Guolei Liu, Liangmo Mei
Electric-filed control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias…
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Source: http://nanochemistry.blogspot.com/2015/03/electrical-control-of-memristance-and.html
