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Single layer graphene was employed as the electrode in quantum dot-light emitting diodes (QD-LEDs) to replace indium tin oxide (ITO). The graphene layer demonstrated low surface roughness, good hole injection ability, and proper work function matching with the poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) layer. Together with the hole transport layer and electron transport layer, the fabricated QD-LED showed good current efficiency and power efficiency, which were even higher than an ITO-based similar device under low current density. The result indicates that graphene can be used as anodes to replace ITO in QD-LEDs.

Long Yan, Yu Zhang, Xiaoyu Zhang, Jia Zhao, Yu Wang, Tieqiang Zhang, Yongheng Jiang, Wenzhu Gao, Jingzhi Yin, Jun Zhao and William W Yu

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