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A unique approach of ZnO nanowire growth mediated via reduction of ZnO by H 2 is presented. It is less complex and more controllable than the conventional carbothermal method (reduction of ZnO by C). The chemical vapor deposition system employed allows precise control of all deposition parameters: (1) source and substrate temperatures, (2) carrier gas compositions, flow and pressure of several gases, (3) growth along a large range of distances from the source. In situ residual gas analysis allows real-time feedback of the process reactions. Controlled, stabilized, homogenous growth (characterized by scanning electron microscopy and x-ray diffraction) over relatively large areas is demonstrated.

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