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Detection of the insulating gap and conductive filament growth direction in resistive memories
Monday, September 21, 2015 3:06
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Nanoscale, 2015, 7,15434-15441
DOI: 10.1039/C5NR03314D, Paper
DOI: 10.1039/C5NR03314D, Paper
E. Yalon, I. Karpov, V. Karpov, I. Riess, D. Kalaev, D. Ritter
The insulating gap and conductive filament growth direction in valence change RRAM devices were studied using the metal-insulator-semiconductor bipolar transistor structure.
The content of this RSS Feed (c) The Royal Society of Chemistry
The insulating gap and conductive filament growth direction in valence change RRAM devices were studied using the metal-insulator-semiconductor bipolar transistor structure.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/09/detection-of-insulating-gap-and_21.html
