| Online: | |
| Visits: | |
| Stories: |
| Story Views | |
| Now: | |
| Last Hour: | |
| Last 24 Hours: | |
| Total: | |
Towards defect-free 1-D GaAs/AlGaAs Heterostructures based on GaAs nanomembranes
Friday, September 18, 2015 7:35
% of readers think this story is Fact. Add your two cents.
Where size matters
Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR04821D, Paper
DOI: 10.1039/C5NR04821D, Paper
Gozde Tutuncuoglu, Maria de la Mata, Davide Deiana, Heidi Potts, Federico Matteini, Jordi Arbiol, Anna Fontcuberta i Morral
We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As4 re-emission and shadowing in the growth rate of…
The content of this RSS Feed (c) The Royal Society of Chemistry
We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As4 re-emission and shadowing in the growth rate of…
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/09/towards-defect-free-1-d-gaasalgaas.html
