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Fabrication of ultra-thin silicon nanowire arrays using ion beam assisted chemical etching
Tuesday, October 6, 2015 2:43
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Where size matters
Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR02876K, Communication
DOI: 10.1039/C5NR02876K, Communication
Zhiyuan Tan, Wenjia Shi, Chungang Guo, Quan Zhang, Liang Yang, Xiaoling Wu, Guo-an Cheng, Ruiting Zheng
Ultra-thin Si nanowire arrays (SiNWAs) with average diameters of less than 10 nm are fabricated using an ion beam assisted chemical etching method. Small Au-Ag alloy catalyst particles are the key to obtaining small diameter SiNWAs.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Ultra-thin Si nanowire arrays (SiNWAs) with average diameters of less than 10 nm are fabricated using an ion beam assisted chemical etching method. Small Au-Ag alloy catalyst particles are the key to obtaining small diameter SiNWAs.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/10/fabrication-of-ultra-thin-silicon.html
