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Study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement
Thursday, October 8, 2015 1:50
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Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR05339K, Paper
DOI: 10.1039/C5NR05339K, Paper
Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang
The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both scientific context and practical application in various electronic and energy-related…
The content of this RSS Feed (c) The Royal Society of Chemistry
The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both scientific context and practical application in various electronic and energy-related…
The content of this RSS Feed (c) The Royal Society of Chemistry
Source: http://nanochemistry.blogspot.com/2015/10/study-on-wake-up-effect-of.html
